DDR3
第三代DDR SDRAM（第三代双倍数据速率同步动态随机存取存储器）广泛使用于电子设备中。如电视、机顶盒、OTT、平板、POE、BD播放器等。它通过较高的时钟频率达到比之前DDR2 SDRAM更高的数据带宽。
- Part No.
- Den.
- Org.
- Voltage
- Package
- Dim.(mm)
- Status
- Speed
- Temperature
- Model
SCB15H1G800CF
Technical Specifications
- Capacity:1Gb
- Organization:128Mbx8
- Width:8x10.5
- Package:TFBGA78
- Voltage:1.5V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
Datasheet- IBIS
SCB15H1G800AF
Technical Specifications
- Capacity:1Gb
- Organization:128Mbx8
- Width:8x10.5
- Package:TFBGA78
- Voltage:1.5V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB15H1G160AF
Technical Specifications
- Capacity:1Gb
- Organization:64Mbx16
- Width:9x13
- Package:TFBGA96
- Voltage:1.5V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB15H1G160CF
Technical Specifications
- Capacity:1Gb
- Organization:64Mbx16
- Width:9x13
- Package:TFBGA96
- Voltage:1.5V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H1G160DF
Technical Specifications
- Capacity:1Gb
- Organization:64Mbx16
- Width:7.5x13
- Package:TFBGA96
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H2G160EF
Technical Specifications
- Capacity:2Gb
- Organization:128Mbx16
- Width:7.5x13.5
- Package:TFBGA96
- Voltage:1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H2G160AF
Technical Specifications
- Capacity:2Gb
- Organization:128Mbx16
- Width:9x13
- Package:TFBGA96
- Voltage:1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB15H2G160AF
Technical Specifications
- Capacity:2Gb
- Organization:128Mbx16
- Width:9x13
- Package:TFBGA96
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H2G800EF
Technical Specifications
- Capacity:2Gb
- Organization:256Mbx8
- Width:7.5x10.6
- Package:TFBGA78
- Voltage:1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H2G800AF
Technical Specifications
- Capacity:2Gb
- Organization:256Mbx8
- Width:8x10.5
- Package:TFBGA78
- Voltage:1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB15H2G800AF
Technical Specifications
- Capacity:2Gb
- Organization:256Mbx8
- Width:8x10.5
- Package:TFBGA78
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H2G800DF
Technical Specifications
- Capacity:2Gb
- Organization:256Mbx8
- Width:7.5x10.6
- Package:TFBGA78
- Voltage:1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H4G160AF
Technical Specifications
- Capacity:4Gb
- Organization:256Mbx16
- Width:7.5x13.5
- Package:TFBGA96
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H4G800AF
Technical Specifications
- Capacity:4Gb
- Organization:512Mbx8
- Width:7.5x10.6
- Package:TFBGA78
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H8G802BF
Technical Specifications
- Capacity:8Gb
- Organization:1Gb
- Width:9x10.5
- Package:TFBGA78
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCB13H8G162BF
Technical Specifications
- Capacity:8Gb
- Organization:512Mbx16
- Width:9x13.5
- Package:TFBGA96
- Voltage:1.5V/1.35V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
Notes
·Temperature Specification
C = Commercial Temperature chip (DDR2, DDR3, DDR4: 0°C ~ +95°C; LPDDR2: 0°C ~ +85°C；SDR, DDR: 0°C ~ +70°C)
I = Industrial Temperature chip (DDR2, DDR3: -40°C ~ +95°C; SDR, DDR, LPDDR2, LPDDR4: -40°C ~ +85°C)
A1 = Automotive grade 1(-40°C ~ +125°C)
A2 = Automotive grade 2(-40°C ~ +105°C)
A25 = Automotive grade 2(-40°C ~ +115°C)
A3 = Automotive grade 3(-40°C ~ +95°C)；LPDDR4(-40°C ~ +85°C)
X = High-Rel grade (-55°C ~ +125°C)
·MP Mass Production
